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parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 17 a i cm pulsed collector current 120 i lm clamped inductive load current 120 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 10 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c mounting torque, 6-32 or m3 screw. 10 lbfin (1.1nm)

e c g n-channel features features features features features fast: optimized for medium operating frequencies ( 1-5 khz in hard switching, >20 khz in resonant mode). generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 industry standard to-220ab package generation 4 igbts offer highest efficiency available igbts optimized for specified application conditions designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbts benefits v ces = 600v v ce(on) typ. = 1.59v @v ge = 15v, i c = 17a 4/17/2000 parameter typ. max. units r jc junction-to-case ??? 1.2 r cs case-to-sink, flat, greased surface 0.5 ??? c/w r ja junction-to-ambient, typical socket mount ??? 80 wt weight 2.0 (0.07) ??? g (oz) thermal resistance absolute maximum ratings w t o -22 0 ab www.irf.com 1
2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 51 77 i c = 17a q ge gate - emitter charge (turn-on) ? 7.9 12 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 19 28 v ge = 15v t d(on) turn-on delay time ? 21 ? t r rise time ? 15 ? t j = 25 c t d(off) turn-off delay time ? 200 300 i c = 17a, v cc = 480v t f fall time ? 180 270 v ge = 15v, r g = 23 ? e on turn-on switching loss ? 0.23 ? energy losses include "tail" e off turn-off switching loss ? 1.18 ? mj see fig. 10, 11, 13, 14 e ts total switching loss ? 1.41 2.0 t d(on) turn-on delay time ? 20 ? t j = 150 c, t r rise time ? 16 ? i c = 17a, v cc = 480v t d(off) turn-off delay time ? 290 ? v ge = 15v, r g = 23 ? t f fall time ? 350 ? energy losses include "tail" e ts total switching loss ? 2.5 ? mj see fig. 13, 14 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1100 ? v ge = 0v c oes output capacitance ? 74 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 14 ?? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ?? vv ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.69 ? v/ cv ge = 0v, i c = 1.0ma ? 1.59 1.8 i c = 17a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.99 ? i c = 31a see fig.2, 5 ? 1.7 ? i c = 17a , t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 6.1 10 ? sv ce = 100v, i c = 17a ?? 250 v ge = 0v, v ce = 600v ?? 2.0 v ge = 0v, v ce = 10v, t j = 25 c ?? 1000 v ge = 0v, v ce = 600v, t j = 150 c i ges gate-to-emitter leakage current ?? 100 n a v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 ? , (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature.
www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e (v) t = 150 c t = 25 c j j v = 15v 20s pulse width ge a 1 10 100 1000 5678910111213 c i , collector-to-emitter current (a) ge t = 25 c t = 150 c j j v , gate-to-emitter volta g e (v) a v = 50v 5s pulse width cc load current ( a ) 0 10 20 30 40 50 0.1 1 10 100 f, fre q uenc y ( khz ) a 60% of rated voltage i ideal diodes square wave: for both: d uty cycle: 50% t = 125 c t = 90 c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = 21w
4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature ( c ) j i = 8.5a i = 17a i = 34a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g le p u l s e (thermal response) thermal response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 10 20 30 40 25 50 75 100 125 150 maxim um d c collector c urrent (a) t , case temperature ( c) c v = 15v ge
www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter volta g e (v) a c ies c res c oes v ge = 0v f = 1 mhz cies = cge + cgc + cce shorted cres = cce coes = cce + cgc 0 4 8 12 16 20 0 102030405060 ge v , gate-to-emitter voltage (v) g q , total gate char g e (nc) a v = 400v i = 17a ce c 1.30 1.35 1.40 1.45 1.50 0 102030405060 total switching losses (mj) a v = 480v v = 15v t = 25 c i = 17a r , gate resistance ( ? ) g cc ge j c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a t , junction temperature ( c) j r = 23 ? v = 15v v = 480v i = 8.5a i = 17a i = 34a g ge cc c c c
6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 10203040 c total switching losses (mj) i , collector-to-emitter current ( a ) a r = 23 ? t = 150 c v = 480v v = 15v g j cc ge 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-em itter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125 c ge j
www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
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0.55 (.022) 0.46 (.018) 3 x 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - b - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - a - 6.47 (.255) 6.10 (.240) 1.15 (.045) m in 4.06 (.160) 3.55 (.140) 3 x 3.96 ( .160 ) 3.55 ( .140 ) 3 x 0.93 ( .037 ) 0.69 ( .027 ) 0.36 (.014) m b a m 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 3 x 2.54 (.100) 2x 1 2 3 4 conforms to jedec outline to-220ab dimensions in millimeters and ( inches ) lead assignments 1 - g a te 2 - c o lle c to r 3 - e m itt e r 4 - c o lle c to r notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim et e r s ( inches ) . 4 conforms to jedec outline to -220a b . ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 4/00
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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